www.irf.com 1 parameter maximum units i d @ t a = 25c continuous drain current, v gs @10v ? 5.8 a i d @ t a = 70c 4.6 i dm pulsed drain current 46 p d @t a = 25c power dissipation ? 2.0 w p d @t a = 70c 1.3 linear derating factor 16 w/c v gs gate-to-source voltage 20 v dv/dt peak diode recovery dv/dt -5.0 v/ns t j, t stg junction and storage temperature range -55 to +150 c IRF7421D1 preliminary fetky ? ? ? ? ? mosfet / schottky diode notes: repetitive rating; pulse width limited by maximum junction temperature (see figure 11) i sd 4.1a, di/dt 110a/s, v dd v (br)dss , t j 150c a pulse width 300s; duty cycle 2% ? surface mounted on fr-4 board, t 10sec. parameter maximum units r q ja junction-to-ambient ? 62.5 c/w absolute maximum ratings (t a = 25c unless otherwise noted) thermal resistance ratings 8/20/98 the fetky family of co-packaged hexfets and schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. generation 5 hexfets utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. combining this technology with international rectifier's low forward drop schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. the so-8 has been modified through a customized leadframe for enhanced thermal characteristics. the so-8 package is designed for vapor phase, infrared or wave soldering techniques. description l co-packaged hexfet ? power mosfet and schottky diode l ideal for synchronous regulator applications l generation v technology l so-8 footprint v dss = 30v r ds(on) = 0.035 w schottky vf = 0.39v 8 1 2 3 4 5 6 7 d d d d g s a s a a top view so-8 tm pd- 91411c 7421d1.p65 8/20/98, 4:07 pm 1
IRF7421D1 2 www.irf.com parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 30 v v gs = 0v, i d = 250a r ds(on) static drain-to-source on-resistance 0.026 0.035 v gs = 10v, i d = 4.1a ? 0.040 0.060 v gs = 4.5v, i d = 2.1a ? v gs(th) gate threshold voltage 1.0 v v ds = v gs , i d = 250a g fs forward transconductance 4.6 s v ds = 15v, i d = 2.1a i dss drain-to-source leakage current 1.0 v ds = 24v, v gs = 0v 25 v ds = 24v, v gs = 0v, t j = 125c i gss gate-to-source forward leakage -100 v gs = -20v gate-to-source reverse leakage 100 v gs = 20v q g total gate charge 18 27 i d = 4.1a q gs gate-to-source charge 2.2 3.3 nc v ds = 24v q gd gate-to-drain ("miller") charge 5.9 8.9 v gs = 10v (see figure 10) a t d(on) turn-on delay time 6.7 v dd = 15v t r rise time 27 i d = 4.1a t d(off) turn-off delay time 20 r g = 6.2 w t f fall time 16 r d = 3.7 w a c iss input capacitance 510 v gs = 0v c oss output capacitance 200 pf v ds = 25v c rss reverse transfer capacitance 84 ? = 1.0mhz (see figure 9) mosfet electrical characteristics @ t j = 25c (unless otherwise specified) w a na ns parameter min. typ. max. units conditions i s continuous source current (body diode) 3.1 a i sm pulsed source current (body diode) 33 v sd body diode forward voltage 1.0 v t j = 25c, i s = 4.1a, v gs = 0v t rr reverse recovery time (body diode) 57 86 ns t j = 25c, i f = 4.1a q rr reverse recovery charge 93 140 nc di/dt = 100a/s a mosfet source-drain ratings and characteristics 2 parameter max. units. conditions i f(av) max. average forward current 1.7 50% duty cycle. rectangular wave, t a = 25c 1.2 t a = 70c i sm max. peak one cycle non-repetitive 120 5s sine or 3s rect. pulse following any rated surge current 11 10ms sine or 6ms rect. pulse load condition & with v rrm applied a a schottky diode maximum ratings parameter max. units conditions v fm max. forward voltage drop 0.50 i f = 1.0a, t j = 25c 0.62 i f = 2.0a, t j = 25c 0.39 i f = 1.0a, t j = 125c 0.57 i f = 2.0a, t j = 125c . i rm max. reverse leakage current 0.06 v r = 30v t j = 25c 16 t j = 125c c t max. junction capacitance 110 pf v r = 5vdc ( 100khz to 1 mhz) 25c dv/dt max. voltage rate of charge 3600 v/ s rated v r schottky diode electrical specifications v ma 7421d1.p65 8/20/98, 4:07 pm 2
IRF7421D1 www.irf.com 3 2 fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics power mosfet characteristics 1 10 100 0.1 1 10 20s pulse w idth t = 25c a j ds v , drain-to-source volta g e (v) 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v d i , drain-to-source current (a) 1 10 100 0.1 1 10 a ds d i , drain-to-source current (a) 20s pulse width t = 150c j 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v v , drain-to-source volta g e (v) 1 10 100 3.0 3.5 4.0 4.5 5.0 5.5 6.0 t = 25c j gs v , g ate-to-source volta g e ( v ) d i , drain-to-source current (a) a v = 10v 20s pulse w idth t = 150c ds j fig 4. typical source-drain diode forward voltage 1 10 100 0.4 0.8 1.2 1.6 2.0 2.4 t = 25c j v = 0v gs v , source-to-drain volta g e (v) i , reverse drain current (a) sd sd a t = 150c j 7421d1.p65 8/20/98, 4:07 pm 3
IRF7421D1 4 www.irf.com r ds (on) , drain-to-source on resistance ( w ) r ds (on) , drain-to-source on resistance ( w ) power mosfet characteristics fig 8. maximum safe operating area fig 6. typical on-resistance vs. drain current fig 7. typical on-resistance vs. gate voltage fig 5. normalized on-resistance vs. temperature 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source o n resistance ds(on) (n orm alized) v = 10v gs a i = 4.1a d 0.1 1 10 100 0.1 1 10 100 v , drain-to-source voltage (v) ds i , drain current (a) operation in this area limited by r d ds(on) t = 25c t = 150c single pulse 100s 1ms 10ms a a j 0.0 0.1 0.2 0 5 10 15 20 25 30 35 a i , drain current (a) d vgs =10v vgs = 4.5v 0.01 0.02 0.03 0.04 0.05 0.06 0.07 3691215 a gs v , gate-to-source voltage (v) i = 5.8a 7421d1.p65 8/20/98, 4:07 pm 4
IRF7421D1 www.irf.com 5 power mosfet characteristics fig 10. typical gate charge vs. gate-to-source voltage fig 9. typical capacitance vs. drain-to-source voltage fig 9. maximum effective transient thermal impedance, junction-to-ambient 0 200 400 600 800 1000 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1m hz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 0 5 10 15 20 25 30 q , total g ate charge (nc) g v , g ate-to-source voltage (v) gs a for test circuit see figure 9 v = 24v v = 15v ds ds i = 4.1a d 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 11. maximum effective transient thermal impedance, junction-to-ambient 7421d1.p65 8/20/98, 4:07 pm 5
IRF7421D1 6 www.irf.com schottky diode characteristics fig. 13 - typical values of reverse current vs. reverse voltage fig.14 - typical junction capacitance vs. reverse voltage reverse current - i r (ma) fig. 12 -typical forward voltage drop characteris- tics 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 fm f instantaneous forward current - i (a) forward volta g e drop - v (v) t = 150c t = 125c t = 25c j j j 0.0001 0.001 0.01 0.1 1 10 100 0 5 10 15 20 25 30 r 100c 75c 50c 25c reverse voltage - v (v) 125c a t = 150c j 10 100 1000 0102030 t = 25c j reverse volta g e - v (v) r t junction capacitance - c (pf) a 7421d1.p65 8/20/98, 4:07 pm 6
IRF7421D1 www.irf.com 7 so-8 package details k x 45 c 8x l 8x q h 0.25 (.010) m a m a 0.10 (.004) b 8x 0.25 (.010) m c a s b s - c - 6x e - b - d e - a - 8 7 6 5 1 2 3 4 5 6 5 recommended footprint 0.72 (.028 ) 8x 1.78 (.070) 8x 6.46 ( .255 ) 1.27 ( .050 ) 3x dim inc h es m illim et er s m in m ax m in m ax a .0532 .0688 1.35 1.75 a1 .0040 .0098 0.10 0.25 b .014 .018 0.36 0.46 c .0075 .0098 0.19 0.25 d .189 .196 4.80 4.98 e .150 .157 3.81 3.99 e .050 basic 1.27 basic e1 .025 basic 0.635 basic h .2284 .2440 5.80 6.20 k .011 .019 0.28 0.48 l 0.16 .050 0.41 1.27 q 0 8 0 8 notes: 1. dimensioning and tolerancing per ansi y14.5m-1982. 2. controlling dimension : inch. 3. dimensions are show n in millimeters (inches). 4. o u tlin e co n f o rm s to jed ec o u tline m s-012aa. dimension does not include mold protrusions mold protrusions not to exceed 0.25 (.006). dimensions is the length of lead for soldering to a substrate.. 5 6 a1 e1 q part marking (irf7101 example ) 7421d1.p65 8/20/98, 4:07 pm 7
IRF7421D1 8 www.irf.com world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t 3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: 171 (k&h bldg.) 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan tel: 81 33 983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 16907 tel: 65 221 8371 data and specifications subject to change without notice. 8/98 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters(inches). 3. outline conforms to eia-481 & eia-541. tape and reel 7421d1.p65 8/20/98, 4:07 pm 8
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